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JAN2N1486 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi
- Manufacturer: Microsemi
- NO: 523-JAN2N1486
- Package: TO-233AA, TO-8-3 Lens Top Metal Can
- Datasheet:
- Stock: 698
- Description: JAN2N1486 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | IN PRODUCTION (Last Updated: 1 month ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-233AA, TO-8-3 Lens Top Metal Can |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| Published | 2002 |
| Series | Military, MIL-PRF-19500/207 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| HTS Code | 8541.29.00.95 |
| Max Power Dissipation | 1.75W |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Pin Count | 3 |
| Reference Standard | MIL-S-19500/180D |
| Qualification Status | Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Case Connection | COLLECTOR |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 55V |
| Max Collector Current | 3A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 750mA 4V |
| Current - Collector Cutoff (Max) | 15μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 40mA, 750mA |
| Current - Collector (Ic) (Max) | 3A |
| Transition Frequency | 1.25MHz |
| Collector Base Voltage (VCBO) | 100V |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
JAN2N1486 Overview
In this device, the DC current gain is 35 @ 750mA 4V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 40mA, 750mA.In this part, there is a transition frequency of 1.25MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
JAN2N1486 Features
the DC current gain for this device is 35 @ 750mA 4V
the vce saturation(Max) is 750mV @ 40mA, 750mA
a transition frequency of 1.25MHz
JAN2N1486 Applications
There are a lot of Microsemi Corporation JAN2N1486 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
