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JAN2N1482 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi
- Manufacturer: Microsemi
- NO: 523-JAN2N1482
- Package: TO-205AA, TO-5-3 Metal Can
- Datasheet:
- Stock: 5406
- Description: JAN2N1482 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -65°C~200°C TJ |
| Packaging | Bulk |
| Series | Military, MIL-PRF-19500/207 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Max Power Dissipation | 1W |
| Terminal Position | BOTTOM |
| Terminal Form | WIRE |
| Pin Count | 3 |
| Qualification Status | Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 1W |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 55V |
| Max Collector Current | 1.5A |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 200mA 4V |
| Current - Collector Cutoff (Max) | 5μA ICBO |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 10mA, 200mA |
| Collector Base Voltage (VCBO) | 100V |
| Emitter Base Voltage (VEBO) | 12V |
| Radiation Hardening | No |
| RoHS Status | Non-RoHS Compliant |
JAN2N1482 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 35 @ 200mA 4V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 10mA, 200mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.When collector current reaches its maximum, it can reach 1.5A volts.
JAN2N1482 Features
the DC current gain for this device is 35 @ 200mA 4V
the vce saturation(Max) is 750mV @ 10mA, 200mA
the emitter base voltage is kept at 12V
JAN2N1482 Applications
There are a lot of Microsemi Corporation JAN2N1482 applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
