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J310G datasheet pdf and Transistors - FETs, MOSFETs - RF product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-J310G
- Package: TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
- Stock: 3746
- Description: J310G datasheet pdf and Transistors - FETs, MOSFETs - RF product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Surface Mount | NO |
| Number of Pins | 3 |
| Weight | 453.59237mg |
| Packaging | Bulk |
| Published | 2006 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -65°C |
| HTS Code | 8541.21.00.75 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | 25V |
| Max Power Dissipation | 350mW |
| Terminal Position | BOTTOM |
| Terminal Form | THROUGH-HOLE |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 60mA |
| Frequency | 100MHz |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Base Part Number | J310 |
| Pin Count | 3 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Operating Mode | DEPLETION MODE |
| Power Dissipation | 350mW |
| Current - Test | 10mA |
| Transistor Application | AMPLIFIER |
| Breakdown Voltage | -25V |
| Drain to Source Voltage (Vdss) | 25V |
| Transistor Type | N-Channel JFET |
| Gate to Source Voltage (Vgs) | 25V |
| Gain | 16dB |
| FET Technology | JUNCTION |
| Voltage - Test | 10V |
| Feedback Cap-Max (Crss) | 2.5 pF |
| Height | 5.33mm |
| Length | 5.2mm |
| Width | 4.19mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
J310G Description
This N-Channel MOSFET is created using the cutting-edge PowerTrench? technology from Fairchild Semiconductor, which was created to reduce the on-state resistance while maintaining good switching performance. These devices are made to give a high level of dv/dt capabilities for the most demanding applications in addition to a significant reduction in on-resistance. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.
J310G Features
Packages without pb are available.
J310G Applications
Switching applications
