IXGF32N170

IXGF32N170 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at Utmel


  • Manufacturer: IXYS
  • NO: 415-IXGF32N170
  • Package: i4-Pac™-5 (3 Leads)
  • Datasheet: pdf
  • Stock: 616
  • Description: IXGF32N170 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at Utmel(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 28 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case i4-Pac™-5 (3 Leads)
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number IXG*32N170
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Polarity NPN
Element Configuration Single
Power Dissipation 200W
Case Connection ISOLATED
Input Type Standard
Transistor Application POWER CONTROL
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 44A
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Collector Emitter Saturation Voltage 2.7V
Turn On Time 90 ns
Test Condition 1020V, 32A, 2.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 32A
Turn Off Time-Nom (toff) 920 ns
IGBT Type NPT
Gate Charge 146nC
Current - Collector Pulsed (Icm) 200A
Td (on/off) @ 25°C 45ns/270ns
Switching Energy 10.6mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 5V
Fall Time-Max (tf) 500ns
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

In Stock

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