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MOSFET (Metal Oxide) N-Channel Tube 300m Ω @ 10A, 10V ±30V 1800pF @ 25V 36nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Manufacturer: IXYS
- NO: 415-IXFA20N50P3
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 2235
- Description: MOSFET (Metal Oxide) N-Channel Tube 300m Ω @ 10A, 10V ±30V 1800pF @ 25V 36nC @ 10V 500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB (Kg)
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| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2011 |
| Series | HiPerFET™, Polar3™ |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | AVALANCHE RATED |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Terminal Form | GULL WING |
| Reach Compliance Code | not_compliant |
| Pin Count | 4 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 380W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 300m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 1.5mA |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 20A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Drain to Source Voltage (Vdss) | 500V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Continuous Drain Current (ID) | 20A |
| Drain-source On Resistance-Max | 0.3Ohm |
| Pulsed Drain Current-Max (IDM) | 40A |
| DS Breakdown Voltage-Min | 500V |
| Avalanche Energy Rating (Eas) | 300 mJ |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 30 Weeks |
| Mount | Surface Mount |
