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ContactIXDR35N60BD1
IXDR35N60BD1 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at Utmel
- Manufacturer: IXYS
- NO: 415-IXDR35N60BD1
- Package: ISOPLUS247™
- Datasheet:
- Stock: 5720
- Description: IXDR35N60BD1 datasheet pdf and Transistors - IGBTs - Single product details from IXYS stock available at Utmel(Kg)
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| Parameters | |
|---|---|
| Turn Off Time-Nom (toff) | 390 ns |
| IGBT Type | NPT |
| Gate Charge | 140nC |
| Current - Collector Pulsed (Icm) | 48A |
| Switching Energy | 1.6mJ (on), 800μJ (off) |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 32 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | ISOPLUS247™ |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| JESD-609 Code | e1 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Additional Feature | HIGH SPEED |
| Max Power Dissipation | 125W |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | IXD*35N60 |
| Pin Count | 3 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Polarity | NPN |
| Element Configuration | Single |
| Power Dissipation | 125W |
| Case Connection | ISOLATED |
| Input Type | Standard |
| Turn On Delay Time | 30 ns |
| Transistor Application | POWER CONTROL |
| Rise Time | 70ns |
| Turn-Off Delay Time | 320 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 38A |
| Reverse Recovery Time | 40ns |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.2V |
| Turn On Time | 75 ns |
| Test Condition | 300V, 35A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 35A |
