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ContactIRLHS6276TR2PBF
MOSFET 2N-CH 20V 4.5A PQFN
- Manufacturer: Infineon Technologies
- NO: 376-IRLHS6276TR2PBF
- Package: 6-PowerVDFN
- Datasheet:
- Stock: 4960
- Description: MOSFET 2N-CH 20V 4.5A PQFN(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-PowerVDFN |
| Number of Pins | 6 |
| Supplier Device Package | 6-PQFN Dual (2x2) |
| Packaging | Cut Tape (CT) |
| Published | 2013 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Base Part Number | IRLHS6276PBF |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Power Dissipation | 1.5W |
| Turn On Delay Time | 4.4 ns |
| Power - Max | 1.5W |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.4A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 10μA |
| Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Gate Charge (Qg) (Max) @ Vgs | 3.1nC @ 4.5V |
| Rise Time | 9.3ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 4.9 ns |
| Turn-Off Delay Time | 10 ns |
| Continuous Drain Current (ID) | 4.5A |
| Threshold Voltage | 800mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 20V |
| Input Capacitance | 310pF |
| Recovery Time | 7.8 ns |
| FET Feature | Logic Level Gate |
| Drain to Source Resistance | 45mOhm |
| Rds On Max | 45 mΩ |
| Nominal Vgs | 800 mV |
| Height | 950μm |
| Length | 2.1mm |
| Width | 2.1mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
