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IRL6372TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRL6372TRPBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 2253
- Description: IRL6372TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 17.9MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Base Part Number | IRL6372PBF |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 5.9 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 17.9m Ω @ 8.1A, 4.5V |
| Vgs(th) (Max) @ Id | 1.1V @ 10μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1020pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Rise Time | 13ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 15 ns |
| Turn-Off Delay Time | 34 ns |
| Continuous Drain Current (ID) | 8.1A |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 65A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1.1 V |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRL6372TRPBF Description
The Fifth Generation HEXFETs from International Rectifier have an incredibly low on-resistance per silicon area because of cutting-edge production methods. The designer now has a very dependable and robust device for usage in a range of applications thanks to the quick switching speed and ruggedized device design that HEXFET Power MOSFETs are widely recognized for. Given that many applications have a limited amount of printed circuit board space, the Micro8 is the perfect tool. The Micro8 will effortlessly fit into incredibly small application contexts like portable devices and PCMCIA cards due to its modest profile (1.1mm).
IRL6372TRPBF Features
Business Standard SO-8 Package
Conforms to RoHS MSL1 is free of Lead, Bromide, and Halogens.
Consumer Requirements
IRL6372TRPBF Applications
DC motor inverter MOSFET that is battery-operated
Load/System Switch
Switches for charging and discharging batteries
