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IRGP4660DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRGP4660DPBF
- Package: TO-247-3
- Datasheet:
- Stock: 6634
- Description: IRGP4660DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Max Power Dissipation | 330W |
| Rise Time-Max | 56ns |
| Element Configuration | Single |
| Power Dissipation | 134W |
| Input Type | Standard |
| Power - Max | 330W |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 1.9V |
| Max Collector Current | 100A |
| Reverse Recovery Time | 115 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.6V |
| Test Condition | 400V, 48A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 48A |
| Gate Charge | 140nC |
| Current - Collector Pulsed (Icm) | 144A |
| Td (on/off) @ 25°C | 60ns/145ns |
| Switching Energy | 625μJ (on), 1.28mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| Fall Time-Max (tf) | 46ns |
| Height | 20.7mm |
| Length | 15.87mm |
| Width | 5.31mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 26 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2007 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
IRGP4660DPBF Description
IRGP4660DPBF is a 600 V, 60 A IGBT with an anti-parallel diode in the TO-247 package. The bipolar transistor IRGP4660DPBF has an insulated gate terminal. The IRGP4660DPBF IGBT combines a control input with a MOS structure and a bipolar power transistor that serves as an output switch into a single device. IGBTs are ideal for applications requiring high voltage and current. IGBTs like the IRGP4660DPBF are made to drive high-power applications with a low-power input.
IRGP4660DPBF Features
Low VCE(ON) and switching losses
5μs short circuit SOA
Lead-free, RoHS compliant
Square RBSOA and maximum junction temperature 175°C
Positive VCE (ON) temperature coefficient
IRGP4660DPBF Applications
Industrial Motor Drive
Inverters
UPS
Solutions for solar energy systems
Industrial heating and welding
