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IRGP30B60KD-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRGP30B60KD-EP
- Package: TO-247-3
- Datasheet:
- Stock: 905
- Description: IRGP30B60KD-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 304W |
| Current Rating | 60A |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 304W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 46 ns |
| Transistor Application | MOTOR CONTROL |
| Rise Time | 28ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 185 ns |
| Collector Emitter Voltage (VCEO) | 2.35V |
| Max Collector Current | 60A |
| Reverse Recovery Time | 125 ns |
| JEDEC-95 Code | TO-247AD |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.35V |
| Turn On Time | 74 ns |
| Test Condition | 400V, 30A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 30A |
| Turn Off Time-Nom (toff) | 237 ns |
| IGBT Type | NPT |
| Gate Charge | 102nC |
| Current - Collector Pulsed (Icm) | 120A |
| Td (on/off) @ 25°C | 46ns/185ns |
| Switching Energy | 350μJ (on), 825μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 5.5V |
| Fall Time-Max (tf) | 42ns |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRGP30B60KD-EP Description
IRGP30B60KD-EP is a 600v Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. The transistor IRGP30B60KD-EP provides benchmark efficiency for motor control, and excellent current sharing in Parallel Operation. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRGP30B60KD-EP is in the TO-247AD package with 304w Power Dissipation.
IRGP30B60KD-EP Features
Low VcE (on) Non-Punch Through IGBT Technology.
Low Diode VF.
10μs Short Circuit Capability.
Square RBSOA.
Ultrasoft Diode Reverse Recovery Characteristics.
Positive VcE (on) Temperature Coefficient.
TO-247AD Package
Lead-Free
IRGP30B60KD-EP Applications
Communications equipment
Wired networking
Industrial
Lighting
Personal electronics
PC & notebooks
