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| Parameters | |
|---|---|
| Collector Emitter Saturation Voltage | 1.95V |
| Turn On Time | 179 ns |
| Test Condition | 480V, 60A, 5 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 60A |
| Max Junction Temperature (Tj) | 150°C |
| Continuous Collector Current | 85A |
| Turn Off Time-Nom (toff) | 503 ns |
| Gate Charge | 340nC |
| Current - Collector Pulsed (Icm) | 200A |
| Td (on/off) @ 25°C | 90ns/245ns |
| Switching Energy | 3.26mJ (on), 2.27mJ (off) |
| Height | 24.8mm |
| Length | 16.1mm |
| Width | 5.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 13 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-274AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 1999 |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| Additional Feature | LOW CONDUCTION LOSS |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 350W |
| Current Rating | 85A |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 350W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 90 ns |
| Transistor Application | POWER CONTROL |
| Rise Time | 94ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 245 ns |
| Collector Emitter Voltage (VCEO) | 600V |
| Max Collector Current | 85A |
| Reverse Recovery Time | 82 ns |
| Collector Emitter Breakdown Voltage | 600V |
IRG4PSC71UDPBF is a single N-channel IGBT power MOSFET transistor from the manufacturer of Infineon Technologies with a voltage of 600V. The operating temperature of IRG4PSC71UDPBF is -55°C~150°C TJ and its maximum power dissipation are 350W. IRG4PSC71UDPBF has 3 pins and it is available in TO-274AA packaging way. The FET Type of IRG4PSC71UDPBF is N-channel and its Reverse Recovery Time is 82 ns.
Collector-Emitter Breakdown Voltage: 600V
Turn On Time: 179 ns
Transistor Application: POWER CONTROL
Polarity/Channel Type: N-CHANNEL
General-purpose amplifier
Switching applications
Power management
Industrial
Please send RFQ , we will respond immediately.