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IRG4PH40KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRG4PH40KDPBF
- Package: TO-247-3
- Datasheet:
- Stock: 836
- Description: IRG4PH40KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 14 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2000 |
| JESD-609 Code | e3 |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
| Additional Feature | LOW CONDUCTION LOSS |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 1.2kV |
| Max Power Dissipation | 160W |
| Peak Reflow Temperature (Cel) | 250 |
| Current Rating | 30A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 160W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 50 ns |
| Transistor Application | MOTOR CONTROL |
| Rise Time | 31ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 96 ns |
| Collector Emitter Voltage (VCEO) | 3.4V |
| Max Collector Current | 30A |
| Reverse Recovery Time | 63 ns |
| JEDEC-95 Code | TO-247AC |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 3.4V |
| Turn On Time | 82 ns |
| Test Condition | 800V, 15A, 10 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 3.4V @ 15V, 15A |
| Turn Off Time-Nom (toff) | 730 ns |
| Gate Charge | 94nC |
| Current - Collector Pulsed (Icm) | 60A |
| Td (on/off) @ 25°C | 50ns/96ns |
| Switching Energy | 1.31mJ (on), 1.12mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 3V |
| Height | 20.3mm |
| Length | 15.875mm |
| Width | 5.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRG4PH40KDPBF IGBT driver is a high-voltage, high-speed power MOSFET and IGBT driver having high and low side referenced output channels that are dependent on each other. IRGP4263DPBF MOSFET can be used to drive a high-side N-channel power MOSFET or IGBT that works between 10 and 600 volts. Infineon Technologies IRGP4263DPBF half-bridge gate driver is used in isolated dc-to-dc power supply modules, solar inverters that require high isolation voltage and long-term dependability.
IRG4PH40KDPBF Features
Floating channel designed for bootstrap operation
Undervoltage lockout
Combines low conduction losses with high switching speed
Tighter parameter distribution and higher efficiency than previous generations
IGBT co-packaged with ultrafast, ultrasoft recovery antiparallel diodes
IRG4PH40KDPBF Applications
Light vehicles
Power Management (SMPS)
Reference Design
Power tools
Robotics
