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IRG4PH20KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRG4PH20KDPBF
- Package: TO-247-3
- Datasheet:
- Stock: 142
- Description: IRG4PH20KDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Additional Feature | LOW CONDUCTION LOSS |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 1.2kV |
| Max Power Dissipation | 60W |
| Current Rating | 11A |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 60W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Transistor Application | MOTOR CONTROL |
| Rise Time | 30ns |
| Polarity/Channel Type | N-CHANNEL |
| Collector Emitter Voltage (VCEO) | 4.3V |
| Max Collector Current | 11A |
| Reverse Recovery Time | 51 ns |
| JEDEC-95 Code | TO-247AC |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Collector Emitter Saturation Voltage | 3.17V |
| Turn On Time | 80 ns |
| Test Condition | 800V, 5A, 50 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 4.3V @ 15V, 5A |
| Turn Off Time-Nom (toff) | 730 ns |
| Gate Charge | 28nC |
| Current - Collector Pulsed (Icm) | 22A |
| Td (on/off) @ 25°C | 50ns/100ns |
| Switching Energy | 620μJ (on), 300μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6.5V |
| Height | 20.7mm |
| Length | 15.87mm |
| Width | 5.3086mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 14 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Bulk |
| Published | 1998 |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
IRG4PH20KDPBF Description
IRG4PH20KDPBF transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRG4PH20KDPBF MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
IRG4PH20KDPBF Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IRG4PH20KDPBF Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
