IRG4PF50WPBF

IRG4PF50WPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-IRG4PF50WPBF
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 1323
  • Description: IRG4PF50WPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Rise Time 26ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 110 ns
Collector Emitter Voltage (VCEO) 2.7V
Max Collector Current 51A
JEDEC-95 Code TO-247AC
Collector Emitter Breakdown Voltage 900V
Collector Emitter Saturation Voltage 2.25V
Turn On Time 54 ns
Test Condition 720V, 28A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 28A
Turn Off Time-Nom (toff) 370 ns
Gate Charge 160nC
Current - Collector Pulsed (Icm) 204A
Td (on/off) @ 25°C 29ns/110ns
Switching Energy 190μJ (on), 1.06mJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 220ns
Height 20.3mm
Length 15.875mm
Width 5.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 14 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 38.000013g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 200W
Terminal Position SINGLE
Current Rating 51A
Number of Elements 1
Element Configuration Dual
Power Dissipation 200W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 29 ns
Transistor Application POWER CONTROL

IRG4PF50WPBF Description


IRG4PF50WPBF belongs to the family of IGBTs that are manufactured by Infineon Technologies to minimize switching losses and conduction losses. It is optimized for use in welding and switch-mode power supply applications. It is able to deliver lower conduction and switching losses, tighter parameter distribution, and exceptional reliability. Minimal minority-carrier recombination and low on-state losses are used to achieve maximum flexibility in device application.



IRG4PF50WPBF Features


  • Tighter parameter distribution 

  • Higher efficiency

  • Low conduction losses

  • High switching speed

  • Available in the TO-247AC package



IRG4PF50WPBF Applications


  • Rail transit

  • Smart grid

  • Aerospace

  • Electric vehicles 

  • New energy equipment


In Stock

Please send RFQ , we will respond immediately.