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IRG4BC30UPBF
  • IRG4BC30UPBF

IRG4BC30UPBF

IRG4BC30UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-IRG4BC30UPBF
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 6507
  • Description: IRG4BC30UPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2000
Part Status Last Time Buy
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination Through Hole
ECCN Code EAR99
Additional Feature ULTRA FAST SWITCHING
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 100W
Current Rating 23A
Number of Elements 1
Element Configuration Single
Power Dissipation 100W
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 17 ns
Transistor Application POWER CONTROL
Rise Time 9.6ns
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 78 ns
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 23A
JEDEC-95 Code TO-220AB
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 2.1V
Input Capacitance 1.1nF
Turn On Time 33 ns
Test Condition 480V, 12A, 23 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 12A
Turn Off Time-Nom (toff) 320 ns
Gate Charge 50nC
Current - Collector Pulsed (Icm) 92A
Td (on/off) @ 25°C 17ns/78ns
Switching Energy 160μJ (on), 200μJ (off)
Gate-Emitter Voltage-Max 20V
Gate-Emitter Thr Voltage-Max 6V
Fall Time-Max (tf) 150ns
Height 16.51mm
Length 10.668mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead, Lead Free

Description


The IRG4BC30UPBF is an insulated gate bipolar transistor. A three-terminal power semiconductor known as an insulated-gate bipolar transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to combine high efficiency and quick switching. It has four P-N-P-N layers that alternate and its four layers are interconnected by a metal-oxide-semiconductor (MOS) gate structure.



Features


  • Industry standard TO-220AB package

  • Lead-Free

  • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, ＞200 kHz in resonant mode

  • Generation 4 IGBT design provides tighter parameter distribution and higher effciency than Generation 3

  • IGBTs optimized for specified application conditions



Application


  • Motor Drive & Control

  • Alternative Energy

  • Power Management

  • Consumer Electronics

  • Maintenance & Repair


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