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IRG4BC30FDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRG4BC30FDPBF
- Package: TO-220-3
- Datasheet:
- Stock: 499
- Description: IRG4BC30FDPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Turn On Time | 69 ns |
| Test Condition | 480V, 17A, 23 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 17A |
| Turn Off Time-Nom (toff) | 620 ns |
| Gate Charge | 51nC |
| Current - Collector Pulsed (Icm) | 124A |
| Td (on/off) @ 25°C | 42ns/230ns |
| Switching Energy | 630μJ (on), 1.39mJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6V |
| Height | 8.77mm |
| Length | 10.54mm |
| Width | 4.69mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 16 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 1998 |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 100W |
| Current Rating | 31A |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 100W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 42 ns |
| Transistor Application | POWER CONTROL |
| Rise Time | 26ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 230 ns |
| Collector Emitter Voltage (VCEO) | 1.8V |
| Max Collector Current | 31A |
| Reverse Recovery Time | 42 ns |
| JEDEC-95 Code | TO-220AB |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.59V |
Descriptions
The IRG4BC30FDPBF is a bipolar transistor featuring an ultrafast soft recovery diode and an insulated gate. It is designed to operate at medium operating frequencies of 1 to 5 kHz in hard switching mode and >20 kHz in resonant mode. In comparison to generation 3, the generation 4 IGBT design has a narrower parameter distribution and improved efficiency. For usage in bridge arrangements, the IGBT is co-packaged with HEXFRED? ultrafast, ultra-soft-recovery anti-parallel diodes. The HEXFRED? diodes have been tuned for use with IGBTs. Snubbing is required less or not at all when recovery qualities are minimized.
Features
● Optimized for specific application conditions
● Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs
● IGBT co-packaged with HEXFREDTM ultrafast,
● Ultra-soft-recovery anti-parallel diodes for use in bridge configurations
● Industry-standard TO-220AB package
● Fast: Optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode).
● Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
● Lead-Free
Applications
● HVAC
● Consumer Electronics
● Power Management
● Switching
● Amplification
● Converters
● Automatic Switch
