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IRG4BC20KD-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRG4BC20KD-SPBF
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 4464
- Description: IRG4BC20KD-SPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 18 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Weight | 2g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2000 |
| JESD-609 Code | e3 |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | ULTRA FAST SOFT RECOVERY |
| Subcategory | Insulated Gate BIP Transistors |
| Voltage - Rated DC | 600V |
| Max Power Dissipation | 60W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | 16A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | IRG4BC20KD-SPBF |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 60W |
| Case Connection | COLLECTOR |
| Input Type | Standard |
| Turn On Delay Time | 54 ns |
| Forward Current | 7A |
| Transistor Application | MOTOR CONTROL |
| Rise Time | 37ns |
| Polarity/Channel Type | N-CHANNEL |
| Turn-Off Delay Time | 180 ns |
| Collector Emitter Voltage (VCEO) | 2.8V |
| Max Collector Current | 16A |
| Reverse Recovery Time | 37 ns |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 2.27V |
| Turn On Time | 88 ns |
| Max Forward Surge Current (Ifsm) | 32A |
| Test Condition | 480V, 9A, 50 Ω, 15V |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 9A |
| Turn Off Time-Nom (toff) | 380 ns |
| Gate Charge | 34nC |
| Td (on/off) @ 25°C | 54ns/180ns |
| Switching Energy | 340μJ (on), 300μJ (off) |
| Gate-Emitter Voltage-Max | 20V |
| Gate-Emitter Thr Voltage-Max | 6V |
| Fall Time-Max (tf) | 110ns |
| Height | 4.83mm |
| Length | 10.668mm |
| Width | 4.826mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRG4BC20KD-SPBF Description
Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.
IRG4BC20KD-SPBF Features
·Fast: Optimized for medium operating
frequencies( 1-5 kHzin hard switching.>20 kHz in resonant mode).
·Generation 4 IGBT design provides tighter
parameter distribution and higher efficiencythan Generation3
·IGBT co-packaged with HEXFREDM ultrafast ultra-soft-recoveryanti-parallel diodes for use in bridge confiqurations
·Industry standard D2Pak package·Lead-Free
IRG4BC20KD-SPBF Application
? AC & DC Motor Controls
? General Purpose Inverters
? Robotics
? Servo Controls
? UPS
