Products
Manufacturer
RFQ
NEWS
ContactIRFI4212H-117P
MOSFET 2N-CH 100V 11A TO-220FP-5
- Manufacturer: Infineon Technologies
- NO: 376-IRFI4212H-117P
- Package: TO-220-5 Full Pack
- Datasheet:
- Stock: 3864
- Description: MOSFET 2N-CH 100V 11A TO-220FP-5(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-5 Full Pack |
| Number of Pins | 5 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Resistance | 72.5MOhm |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 18W |
| Terminal Position | SINGLE |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 18W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 4.7 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | AMPLIFIER |
| Rds On (Max) @ Id, Vgs | 72.5m Ω @ 6.6A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 490pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| Rise Time | 8.3ns |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time (Typ) | 4.3 ns |
| Turn-Off Delay Time | 9.5 ns |
| Continuous Drain Current (ID) | 11A |
| Threshold Voltage | 5V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 44A |
| Avalanche Energy Rating (Eas) | 41 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Recovery Time | 54 ns |
| FET Feature | Standard |
| Nominal Vgs | 5 V |
| Height | 9.02mm |
| Length | 10.67mm |
| Width | 4.83mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
