IRFHS9351TR2PBF

MOSFET 2P-CH 30V 2.3A PQFN


  • Manufacturer: Infineon Technologies
  • NO: 376-IRFHS9351TR2PBF
  • Package: 6-PowerVDFN
  • Datasheet: pdf
  • Stock: 7576
  • Description: MOSFET 2P-CH 30V 2.3A PQFN(Kg)

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  • Delivery: Delivery
  • Payment: payment

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Shipping Cost

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The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

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Delivery Time

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FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Width 2.1mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-PowerVDFN
Number of Pins 6
Supplier Device Package 6-PQFN Dual (2x2)
Packaging Cut Tape (CT)
Published 2011
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1.4W
Base Part Number IRFHS9351PBF
Element Configuration Dual
Power Dissipation 1.4W
Turn On Delay Time 8.3 ns
Power - Max 1.4W
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 170mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id 2.4V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds 160pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.3A
Gate Charge (Qg) (Max) @ Vgs 3.7nC @ 10V
Rise Time 30ns
Drain to Source Voltage (Vdss) 30V
Fall Time (Typ) 7.9 ns
Turn-Off Delay Time 6.3 ns
Continuous Drain Current (ID) -2.3A
Threshold Voltage -1.8V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -30V
Input Capacitance 160pF
Recovery Time 30 ns
FET Feature Logic Level Gate
Drain to Source Resistance 170mOhm
Rds On Max 53 mΩ
Nominal Vgs -1.8 V
Height 950μm
Length 2.1mm

In Stock

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