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IRFH7911TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRFH7911TRPBF
- Package: 18-PowerVQFN
- Datasheet:
- Stock: 402
- Description: IRFH7911TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 100A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 2.35 V |
| Height | 939.8μm |
| Length | 5.9944mm |
| Width | 5mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 39 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 18-PowerVQFN |
| Number of Pins | 18 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 8.6MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 3.4W |
| Terminal Position | QUAD |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | IRFH7911PBF |
| JESD-30 Code | R-PQFP-N6 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.4W |
| Case Connection | DRAIN SOURCE |
| Power - Max | 2.4W 3.4W |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8.6m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1060pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 13A 28A |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 4.5V |
| Continuous Drain Current (ID) | 13A |
| Gate to Source Voltage (Vgs) | 20V |
IRFH7911TRPBF Description
In 1977, Alex Lidow and Tom Herman co-invented HexFET, a hexagonal power MOSFET, at Stanford University. HexFET was commercialized by the International Rectifier in 1978.
IRFH7911TRPBF Features
Control and synchronous FET in one package
Low charge control MOSFET(8.3 nC typical)
Low Rpso synchronous MOSFET(< 3.0 m|?)
100% Rg tested
Low Profile(?ü0.9 mm)
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Leadno Bromide and noHalogen
MSL2.Consumer Qualification
IRFH7911TRPBF Applications
Control and synchronous MOSFET for buck converters
