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ContactIRFD220
MOSFET (Metal Oxide) N-Channel Tube 800m Ω @ 480mA, 10V ±20V 260pF @ 25V 14nC @ 10V 4-DIP (0.300, 7.62mm)
- Manufacturer: Vishay Siliconix
- NO: 880-IRFD220
- Package: 4-DIP (0.300, 7.62mm)
- Datasheet:
- Stock: 31407
- Description: MOSFET (Metal Oxide) N-Channel Tube 800m Ω @ 480mA, 10V ±20V 260pF @ 25V 14nC @ 10V 4-DIP (0.300, 7.62mm) (Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | 4-DIP (0.300, 7.62mm) |
| Number of Pins | 4 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2015 |
| JESD-609 Code | e0 |
| Pbfree Code | no |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 200V |
| Technology | MOSFET (Metal Oxide) |
| Reach Compliance Code | unknown |
| Current Rating | 800mA |
| Pin Count | 4 |
| Configuration | Single |
| Number of Channels | 1 |
| Power Dissipation-Max | 1W Ta |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1W |
| Turn On Delay Time | 7.2 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 800m Ω @ 480mA, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 260pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 800mA Ta |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| Rise Time | 22ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 22 ns |
| Turn-Off Delay Time | 19 ns |
| Continuous Drain Current (ID) | 800mA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 0.8A |
| Drain to Source Breakdown Voltage | 200V |
| Height | 3.37mm |
| Length | 5mm |
| Width | 6.29mm |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
