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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIHH21N60EF-T1-GE3 | Vishay Siliconix | $4.36 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh21n60eft1ge3-datasheets-3535.pdf | 8-PowerTDFN | 21 Weeks | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 19A | 600V | 174W Tc | N-Channel | 2035pF @ 100V | 185m Ω @ 11A, 10V | 4V @ 250μA | 19A Tc | 86nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG47N60AEL-GE3 | Vishay Siliconix | $8.05 |
Min: 1 Mult: 1 |
download | EL | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg47n60aelge3-datasheets-3645.pdf | TO-247-3 | TO-247AC | 600V | 379W Tc | N-Channel | 4600pF @ 100V | 65mOhm @ 23.5A, 10V | 4V @ 250μA | 47A Tc | 222nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG73N60AEL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EL | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg73n60aelge3-datasheets-3694.pdf | TO-247-3 | TO-247AC | 600V | 520W Tc | N-Channel | 6709pF @ 100V | 42mOhm @ 36.5A, 10V | 4V @ 250μA | 69A Tc | 342nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP30N60AEL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EL | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp30n60aelge3-datasheets-3710.pdf | TO-220-3 | TO-220AB | 600V | 250W Tc | N-Channel | 2565pF @ 100V | 120mOhm @ 15A, 10V | 4V @ 250μA | 28A Tc | 120nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP28N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sihp28n60efge3-datasheets-3768.pdf | TO-220-3 | 3 | 14 Weeks | 6.000006g | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSFM-T3 | 24 ns | 40ns | 39 ns | 82 ns | 28A | 20V | SILICON | SWITCHING | 600V | 600V | 250W Tc | TO-220AB | 75A | N-Channel | 2714pF @ 100V | 123m Ω @ 14A, 10V | 4V @ 250μA | 28A Tc | 120nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SIHA30N60AEL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EL | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha30n60aelge3-datasheets-3857.pdf | TO-220-3 Full Pack | 44 Weeks | TO-220 Full Pack | 600V | 39W Tc | N-Channel | 2565pF @ 100V | 120mOhm @ 15A, 10V | 4V @ 250μA | 28A Tc | 120nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHW73N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihw73n60ege3-datasheets-3976.pdf | TO-247-3 | 3 | 19 Weeks | 38.000013g | 3 | No | 1 | Single | 1 | 63 ns | 105ns | 120 ns | 290 ns | 73A | 20V | SILICON | SWITCHING | 520W Tc | TO-247AD | 600V | N-Channel | 7700pF @ 100V | 39m Ω @ 36A, 10V | 4V @ 250μA | 73A Tc | 362nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SIHW47N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihw47n60efge3-datasheets-3986.pdf | TO-247-3 | Lead Free | 3 | 38.000013g | 3 | No | 1 | Single | 1 | 30 ns | 61ns | 58 ns | 94 ns | 47A | 20V | SILICON | SWITCHING | 600V | 600V | 379W Tc | TO-247AD | 0.067Ohm | N-Channel | 4854pF @ 100V | 65m Ω @ 24A, 10V | 4V @ 250μA | 47A Tc | 225nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SIHB30N60AEL-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EL | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | 600V | 250W Tc | N-Channel | 2565pF @ 100V | 120mOhm @ 15A, 10V | 4V @ 250μA | 28A Tc | 120nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG73N60E-E3 | Vishay Siliconix | $7.54 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg73n60ege3-datasheets-0381.pdf | TO-247-3 | 3 | 38.000013g | 3 | No | SINGLE | 1 | 1 | FET General Purpose Powers | 63 ns | 158ns | 180 ns | 290 ns | 73A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 520W Tc | TO-247AC | N-Channel | 7700pF @ 100V | 39m Ω @ 36A, 10V | 4V @ 250μA | 73A Tc | 362nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| IRFB18N50K | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfb18n50kpbf-datasheets-6636.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6 Weeks | 6.000006g | 3 | No | 1 | Single | 220W | 1 | TO-220AB | 2.83nF | 22 ns | 60ns | 30 ns | 45 ns | 17A | 30V | 500V | 220W Tc | 290mOhm | N-Channel | 2830pF @ 25V | 290mOhm @ 10A, 10V | 5V @ 250μA | 17A Tc | 120nC @ 10V | 290 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SIHG64N65E-GE3 | Vishay Siliconix | $68.42 |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg64n65ege3-datasheets-4227.pdf | TO-247-3 | 3 | 18 Weeks | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 520W Tc | TO-247AC | 64A | 202A | 0.047Ohm | 1800 mJ | N-Channel | 7497pF @ 100V | 47m Ω @ 32A, 10V | 4V @ 250μA | 64A Tc | 369nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFPF50 | Vishay Siliconix | $1.96 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfpf50pbf-datasheets-6872.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | 6 Weeks | 38.000013g | 3 | 1 | Single | TO-247-3 | 2.9nF | 20 ns | 34ns | 37 ns | 130 ns | 6.7A | 20V | 900V | 190W Tc | 1.6Ohm | N-Channel | 2900pF @ 25V | 1.6Ohm @ 4A, 10V | 4V @ 250μA | 6.7A Tc | 200nC @ 10V | 1.6 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFD110 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd110pbf-datasheets-8803.pdf | 100V | 1A | 4-DIP (0.300, 7.62mm) | Contains Lead | 540mOhm | 4 | Lead, Tin | No | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 180pF | 6.9 ns | 16ns | 16 ns | 15 ns | 1A | 20V | 100V | 1.3W Ta | 540mOhm | 100V | N-Channel | 180pF @ 25V | 540mOhm @ 600mA, 10V | 4V @ 250μA | 1A Ta | 8.3nC @ 10V | 540 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF510 | Vishay Siliconix | $0.36 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf510pbf-datasheets-0849.pdf | 100V | 5.6A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | Unknown | 3 | No | 1 | Single | 43W | 1 | TO-220AB | 180pF | 6.9 ns | 16ns | 9.4 ns | 15 ns | 5.6A | 20V | 100V | 43W Tc | 540mOhm | 100V | N-Channel | 180pF @ 25V | 4 V | 540mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 8.3nC @ 10V | 540 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRFD9110 | Vishay Siliconix | $0.67 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd9110pbf-datasheets-9062.pdf | -100V | -700mA | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Contains Lead | 4 | 1 | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 200pF | 9.6 ns | 29ns | 29 ns | 21 ns | 1A | 20V | 100V | 1.3W Ta | 1.2Ohm | -100V | P-Channel | 200pF @ 25V | 1.2Ohm @ 420mA, 10V | 4V @ 250μA | 700mA Ta | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFD220 | Vishay Siliconix | $0.17 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd220pbf-datasheets-0078.pdf | 200V | 800mA | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Contains Lead | 4 | no | unknown | e0 | Tin/Lead (Sn/Pb) | 4 | 1 | 1W | FET General Purpose Power | 7.2 ns | 22ns | 22 ns | 19 ns | 800mA | 20V | Single | 1W Ta | 0.8A | 200V | N-Channel | 260pF @ 25V | 800m Ω @ 480mA, 10V | 4V @ 250μA | 800mA Ta | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF9510 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9510pbf-datasheets-9175.pdf | -100V | -4A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | 43W | TO-220AB | 200pF | 10 ns | 27ns | 17 ns | 15 ns | 4A | 20V | 100V | 43W Tc | 1.2Ohm | -100V | P-Channel | 200pF @ 25V | 1.2Ohm @ 2.4A, 10V | 4V @ 250μA | 4A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFD9120 | Vishay Siliconix | $0.28 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd9120pbf-datasheets-0574.pdf | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Unknown | 4 | No | 1 | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 390pF | 9.6 ns | 29ns | 29 ns | 21 ns | 1A | 20V | 100V | 1.3W Ta | 600mOhm | -100V | P-Channel | 390pF @ 25V | -4 V | 600mOhm @ 600mA, 10V | 4V @ 250μA | 1A Ta | 18nC @ 10V | 600 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRFD210 | Vishay Siliconix | $0.31 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd210pbf-datasheets-0562.pdf | 200V | 600mA | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Contains Lead | 4 | No | 1 | 1W | 1 | 4-DIP, Hexdip, HVMDIP | 140pF | 8.2 ns | 17ns | 17 ns | 14 ns | 600mA | 20V | 200V | 1W Ta | 1.5Ohm | 200V | N-Channel | 140pF @ 25V | 1.5Ohm @ 360mA, 10V | 4V @ 250μA | 600mA Ta | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF9630 | Vishay Siliconix | $0.16 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9630pbf-datasheets-1286.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 3 | 1 | Single | TO-220AB | 700pF | 12 ns | 27ns | 24 ns | 28 ns | 6.5A | 20V | 200V | 74W Tc | 800mOhm | P-Channel | 700pF @ 25V | 800mOhm @ 3.9A, 10V | 4V @ 250μA | 6.5A Tc | 29nC @ 10V | 800 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IRF620 | Vishay Siliconix | $0.22 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf620pbf-datasheets-8474.pdf | 200V | 6A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 6.000006g | 3 | 52A | 200V | 1 | Single | 50W | 1 | TO-220AB | 260pF | 7.2 ns | 22ns | 13 ns | 19 ns | 5.2A | 20V | 200V | 50W Tc | 800mOhm | 200V | N-Channel | 260pF @ 25V | 800mOhm @ 3.1A, 10V | 4V @ 250μA | 5.2A Tc | 14nC @ 10V | 800 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IRF9530 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9530pbf-datasheets-1865.pdf | -100V | -12A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | 88W | 1 | TO-220AB | 860pF | 12 ns | 52ns | 39 ns | 31 ns | 12A | 20V | 100V | 88W Tc | 300mOhm | -100V | P-Channel | 860pF @ 25V | 300mOhm @ 7.2A, 10V | 4V @ 250μA | 12A Tc | 38nC @ 10V | 300 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRFD9210 | Vishay Siliconix | $0.33 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd9210pbf-datasheets-2503.pdf | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | 4 | No | 1 | 1W | 1 | 4-DIP, Hexdip, HVMDIP | 170pF | 8 ns | 12ns | 12 ns | 11 ns | 400mA | 20V | 200V | 1W Ta | 3Ohm | -200V | P-Channel | 170pF @ 25V | 3Ohm @ 240mA, 10V | 4V @ 250μA | 400mA Ta | 8.9nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF530 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | /files/vishaysiliconix-sihfr420age3-datasheets-4094.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | Unknown | 160mOhm | 3 | No | 1 | Single | 88W | 1 | TO-220AB | 670pF | 10 ns | 34ns | 24 ns | 23 ns | 14A | 20V | 100V | 88W Tc | 160mOhm | 100V | N-Channel | 670pF @ 25V | 2 V | 160mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 26nC @ 10V | 160 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF9610 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf9610pbf-datasheets-1546.pdf | -200V | -1.8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | 1 | Single | 20W | TO-220AB | 170pF | 8 ns | 15ns | 8 ns | 10 ns | -1.8A | 20V | 200V | 20W Tc | 3Ohm | -200V | P-Channel | 170pF @ 25V | 3Ohm @ 900mA, 10V | 4V @ 250μA | 1.8A Tc | 11nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF830 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -65°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf830pbf-datasheets-8583.pdf | 500V | 4.5A | TO-220-3 | 10.4mm | 9.01mm | 4.6mm | Contains Lead | 6.000006g | 3 | 1 | Single | 74W | 1 | TO-220AB | 610pF | 8.2 ns | 8ns | 5 ns | 42 ns | 4.5A | 20V | 500V | 74W Tc | 1.5Ohm | 500V | N-Channel | 610pF @ 25V | 1.5Ohm @ 2.7A, 10V | 4V @ 250μA | 4.5A Tc | 38nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF520 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf520pbf-datasheets-9409.pdf | 100V | 9.2A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | 60W | 1 | TO-220AB | 360pF | 8.8 ns | 30ns | 20 ns | 19 ns | 9.2A | 20V | 100V | 60W Tc | 270mOhm | 100V | N-Channel | 360pF @ 25V | 270mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 16nC @ 10V | 270 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| IRF610 | Vishay Siliconix | $0.10 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf610pbf-datasheets-8599.pdf | 200V | 3.3A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | Unknown | 3 | No | 1 | Single | 3W | 1 | TO-220AB | 140pF | 8.2 ns | 17ns | 8.9 ns | 14 ns | 3.3A | 20V | 200V | 36W Tc | 1.5Ohm | 200V | N-Channel | 140pF @ 25V | 4 V | 1.5Ohm @ 2A, 10V | 4V @ 250μA | 3.3A Tc | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRF710 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-irf710pbf-datasheets-8514.pdf | 400V | 2A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Contains Lead | 6.000006g | 3 | No | 1 | Single | TO-220AB | 170pF | 8 ns | 9.9ns | 11 ns | 21 ns | 2A | 20V | 400V | 36W Tc | 3.6Ohm | 400V | N-Channel | 170pF @ 25V | 3.6Ohm @ 1.2A, 10V | 4V @ 250μA | 2A Tc | 17nC @ 10V | 3.6 Ω | 10V | ±20V |
