IRFBA22N50APBF

MOSFET (Metal Oxide) N-Channel Tube 230m Ω @ 13.8A, 10V ±30V 3400pF @ 25V 115nC @ 10V Super-220™


  • Manufacturer: Vishay Siliconix
  • NO: 880-IRFBA22N50APBF
  • Package: Super-220™
  • Datasheet: pdf
  • Stock: 7134
  • Description: MOSFET (Metal Oxide) N-Channel Tube 230m Ω @ 13.8A, 10V ±30V 3400pF @ 25V 115nC @ 10V Super-220™ (Kg)

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SPECIFICATIONS

Parameters
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2002
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Resistance 230Ohm
Terminal Finish MATTE TIN
Additional Feature AVALANCHE RATED
Subcategory FET General Purpose Power
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating 24A
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 340W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 340W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 230m Ω @ 13.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 24A Tc
Gate Charge (Qg) (Max) @ Vgs 115nC @ 10V
Rise Time 66ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 44 ns
Turn-Off Delay Time 46 ns
Continuous Drain Current (ID) 24A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 500V
Pulsed Drain Current-Max (IDM) 96A
Dual Supply Voltage 500V
Nominal Vgs 4 V
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Mount Through Hole
Mounting Type Through Hole
Package / Case Super-220™
Number of Pins 3
Transistor Element Material SILICON

In Stock

Please send RFQ , we will respond immediately.