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IRF9956TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF9956TRPBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 4743
- Description: IRF9956TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
| Voltage - Rated DC | 20V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Current Rating | 3.5A |
| Base Part Number | IRF9956PBF |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 6.2 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 2.2A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| Rise Time | 8.8ns |
| Fall Time (Typ) | 3 ns |
| Turn-Off Delay Time | 13 ns |
| Continuous Drain Current (ID) | 3.5A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.1Ohm |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 16A |
| Avalanche Energy Rating (Eas) | 44 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 20 V |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
IRF9956TRPBF Description
International rectifier's fifth generation HEXFETs from the Infineon series use cutting-edge processing methods to deliver incredibly low silicon area resistance. This feature, along with the HEXFET power MOSFET's well-known fast switching speed and ruggedized device architecture, offering suitable level device for, gives designers an incredibly efficient and dependable device for use in a range of applications. Through the use of a unique lead frame, the SO-8 has been redesigned to have improved thermal properties and multiple-die capabilities, making it perfect for a range of power applications. With this enhancement, applications can leverage many devices while using significantly less board space. The container is made for infrared, vapour phase soldering methods.
IRF9956TRPBF Features
Generation V technology
Ultra low on resistance
Surface mount
Very low gate charge and switching losses
Fully avalanche rated
Dual N-channel MOSFET
IRF9956TRPBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
