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ContactIRF9953TRPBF
MOSFET 2P-CH 30V 2.3A 8-SOIC
- Manufacturer: Infineon Technologies
- NO: 376-IRF9953TRPBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 3844
- Description: MOSFET 2P-CH 30V 2.3A 8-SOIC(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Resistance | 250mOhm |
| Additional Feature | HIGH RELIABILITY |
| Voltage - Rated DC | -30V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Current Rating | -2.3A |
| Base Part Number | IRF9953PBF |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 9.7 ns |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 250m Ω @ 1A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Rise Time | 14ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 6.9 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 2.3A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -30V |
| Pulsed Drain Current-Max (IDM) | 10A |
| Avalanche Energy Rating (Eas) | 57 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
