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IRF9953PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF9953PBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 2883
- Description: IRF9953PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Supplier Device Package | 8-SO |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 1997 |
| Series | HEXFET® |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | -30V |
| Max Power Dissipation | 2W |
| Current Rating | -2.3A |
| Base Part Number | IRF9953PBF |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Power Dissipation | 2W |
| Turn On Delay Time | 9.7 ns |
| Power - Max | 2W |
| FET Type | 2 P-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 1A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Rise Time | 14ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 6.9 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | -2.3A |
| Threshold Voltage | -1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -30V |
| Input Capacitance | 190pF |
| FET Feature | Standard |
| Drain to Source Resistance | 250mOhm |
| Rds On Max | 250 mΩ |
| Nominal Vgs | -1 V |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRF9953PBF Description
International Rectifier's Infineon Technologies IRF9953PBF is a -30V Dual P-Channel HEXFET Power MOSFET in SO-8 packaging. Innovative processing techniques are used to obtain the extremely low on-resistance. It is intended for decreased board space vapour phase, infrared, or wave soldering processes due to its packaging.
IRF9953PBF Features
Generation V Technology
Ultra-Low On-Resistance
Dual P-Channel MOSFET
Surface Mount
Very Low Gate Charge and
Switching Losses
Fully Avalanche Rated
Lead-Free
IRF9953PBF Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
