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IRF9952TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF9952TRPBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 7453
- Description: IRF9952TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 100mOhm |
| Additional Feature | HIGH RELIABILITY |
| Max Power Dissipation | 2W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 3.5A |
| Base Part Number | IRF9952PBF |
| Number of Elements | 2 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 2.2A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A 2.3A |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| Rise Time | 14ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 3.5A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 16A |
| Avalanche Energy Rating (Eas) | 44 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1 V |
IRF9952TRPBF Description
In the new generation of hex adecimal transistors, rectifiers use advanced processing technology to achieve extremely low on-resistance per silicon area. Combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, it provides designers with an extremely efficient and reliable device for use in a variety of applications.The SO-8 has been modified through custom lead frames to enhance thermal characteristics and multi-chip capabilities, making it an ideal choice for a variety of power applications.With these improvements multiple devices that can be used to greatly reduce circuit board space. Infrared welding technology.
IRF9952TRPBF Features
Generation VTechnology Ultra Low On-Resistance
Dual N and P Channe MOSFET Surface Mount
Very Low Gate Charge and Switching Losses
Fully Avalanche Rated Lead-Free
IRF9952TRPBF Applications
it provides designers with an extremely efficient and reliable device for use in a variety of applications.
