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IRF9952 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF9952
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 8044
- Description: IRF9952 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2001 |
| Series | HEXFET® |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin/Lead (Sn/Pb) |
| Additional Feature | HIGH RELIABILITY |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 245 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PDSO-G8 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Power - Max | 2W |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 100m Ω @ 2.2A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A 2.3A |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| JEDEC-95 Code | MS-012AA |
| Drain Current-Max (Abs) (ID) | 3.5A |
| Drain-source On Resistance-Max | 0.1Ohm |
| Pulsed Drain Current-Max (IDM) | 16A |
| DS Breakdown Voltage-Min | 30V |
| Avalanche Energy Rating (Eas) | 44 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| RoHS Status | Non-RoHS Compliant |
IRF9952 Description
The fifth generation HEXFET of International Rectifier Company adopts advanced technology to achieve extremely low on-resistance per silicon area. Combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, it provides designers with an extremely efficient and reliable device for use in a variety of applications.
SO-8 has been modified through a custom EadFrame to enhance thermal characteristics and multi-chip capabilities, making it an ideal choice for a variety of power applications. With these improvements, multiple devices can be used in applications that significantly reduce circuit board space. The package is designed for gas phase, infrared or wave soldering technology.
IRF9952 Features
Generation V Technology
Ultra Low On-Resistance
Dual N and PChannel MOSFET
Surface Mount
Very Low Gate Charge and Switching Losses
Fully Avalanche Rated
IRF9952 Applications
it provides designers with an extremely efficient and reliable device for use in a variety of applications.
