Products
Manufacturer
RFQ
NEWS
ContactIRF9910TRPBF
IRF9910TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF9910TRPBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 7821
- Description: IRF9910TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
.png)
You may place an order without registering to Chip Smart.
We strongly suggest you sign in before purchasing as you
can track your order in real time.
For your convenience, we accept multiple payment methods in USD, including PayPal, Credit Card, and wire transfer.
RFQ (Request for Quotations)It is recommended to request for quotations to get the latest
prices and inventories about the part.
Our sales will reply to
your request by email within 24 hours.
1. You'll receive an order information email in your inbox.
(Please remember to check the spam folder if you didn't hear from us).
2. Since inventories and prices may fluctuate to some
extent, the sales manager is going to reconfirm the order and let you know if there
are any updates.
Shipping starts at $40, but some countries will exceed $40. For
example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time
zone and country.
Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Terminal Form | GULL WING |
| Current Rating | 10A |
| Base Part Number | IRF9910PBF |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 9.3m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id | 2.55V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A 12A |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Continuous Drain Current (ID) | 10A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 20V |
| Avalanche Energy Rating (Eas) | 33 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 2.55 V |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 13.4MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 20V |
| Max Power Dissipation | 2W |
IRF9910TRPBF Description
Fifth Generation HEXFETs from International Rectifier have extraordinarily low on-resistance per silicon area thanks to cutting-edge manufacturing methods. This feature, along with the rapid switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, provides the designe with an incredibly efficient and reliable device for usage in a number of applications. The SO-8's improved thermal properties and multiple-die capacity make it the perfect choice for a variety of power applications. This adjustment was possible because to the usage of a leadframe that was custom made. With this invention, multiple devices can be used while substantially less board area is needed. The package is designed for use with wave soldering or vapor phase infrared technologies.
IRF9910TRPBF Features
4.5V VGS with Very Low RDS(on)
Gate Fee is Minimal
Voltage and Current of Fully Characterized Avalanches
Gate Rating Maximum 20V VGS
IRF9910TRPBF Applications
Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, gaming consoles, and set-top box
free of lead
