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IRF9910PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF9910PBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 5350
- Description: IRF9910PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Series | HEXFET® |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Voltage - Rated DC | 20V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Current Rating | 10A |
| Base Part Number | IRF9910PBF |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 13.4m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.55V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 900pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A 12A |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Rise Time | 14ns |
| Fall Time (Typ) | 7.5 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 12A |
| Threshold Voltage | 2.55V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.0093Ohm |
| Drain to Source Breakdown Voltage | 20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 2.55 V |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRF9910PBF Description
The Infineon Technologies IRF9910PBF is a 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package from International Rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance.
IRF9910PBF Features
Very Low RDS(on) at 4.5V VGS
Low Gate Charge
Fully Characterized Avalanche Voltage and Current
20V VGS Max. Gate Rating
IRF9910PBF Applications
POL converters in desktops, servers, graphics cards, game consoles and set-top box
