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ContactIRF9395MTRPBF
IRF9395MTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF9395MTRPBF
- Package: DirectFET™ Isometric MC
- Datasheet:
- Stock: 3430
- Description: IRF9395MTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 17 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | DirectFET™ Isometric MC |
| Number of Pins | 10 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2007 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Last Time Buy |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 2.1W |
| Terminal Position | BOTTOM |
| JESD-30 Code | R-XBCC-N6 |
| Number of Elements | 1 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.1W |
| Case Connection | DRAIN |
| Turn On Delay Time | 19 ns |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 7m Ω @ 14A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3241pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 64nC @ 10V |
| Rise Time | 142ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 121 ns |
| Turn-Off Delay Time | 76 ns |
| Continuous Drain Current (ID) | 14A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 75A |
| Drain-source On Resistance-Max | 0.007Ohm |
| Drain to Source Breakdown Voltage | -30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
IRF9395MTRPBF Description
IRF9395MTRPbF combines the latest HEXFET P-channel power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-resistance in a 0.6 mm package. The DirectFET package is compatible with existing layout geometry used in power applications, printed circuit board assembly equipment and gas phase, infrared or convection soldering technologies, as long as the manufacturing method and process instructions in the AN-1035 application instructions are followed. The DirectFET package allows double-sided cooling to maximize heat transfer in the power system, increasing the previously optimal thermal resistance by 80 per cent.
IRF9395MTRPBF Applications
·Isolation Switch for Input Power or Battery Application
IRF9395MTRPBF Features
Environmentaly Friendly Product
RoHs Compliant Containing no Lead no Bromide and no Halogen
Dual Common-Drain P-Channel MOSFETs Provides High Level of Integration and Very Low RDS(on)
