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ContactIRF9358TRPBF
IRF9358TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF9358TRPBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 9820
- Description: IRF9358TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | Other Transistors |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Base Part Number | IRF9358PBF |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 5.7 ns |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 16.3m Ω @ 9.2A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1740pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| Rise Time | 7.2ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 69 ns |
| Turn-Off Delay Time | 146 ns |
| Continuous Drain Current (ID) | 9.2A |
| Threshold Voltage | -1.8V |
| JEDEC-95 Code | MS-012AA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.0163Ohm |
| Drain to Source Breakdown Voltage | -30V |
| Pulsed Drain Current-Max (IDM) | 73A |
| Avalanche Energy Rating (Eas) | 210 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | -1.8 V |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRF9358TRPBF Description
In 1977, Alex Lidow and Tom Herman co-invented HexFET, a hexagonal power MOSFET, at Stanford University. HexFET was commercialized by the International Rectifier in 1978.
IRF9358TRPBF Applications
·Charge and Discharge Switch for Notebook PC Battery Application
IRF9358TRPBF Features
Industry-Standard SO-8 Package
RoHS Compliant Containing no Leadno Bromide and no Halogen
