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IRF8910PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF8910PBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 4225
- Description: IRF8910PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Series | HEXFET® |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | IRF8910PBF |
| JESD-30 Code | R-PDSO-G8 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Power - Max | 2W |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 13.4m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.55V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 960pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| JEDEC-95 Code | MS-012AA |
| Drain Current-Max (Abs) (ID) | 10A |
| Drain-source On Resistance-Max | 0.0134Ohm |
| Pulsed Drain Current-Max (IDM) | 82A |
| DS Breakdown Voltage-Min | 20V |
| Avalanche Energy Rating (Eas) | 19 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| RoHS Status | ROHS3 Compliant |
IRF8910PBF Description
The Infineon Technologies IRF8910PBF is a 20V Dual N-Channel Power MOSFET in a SO-8 package optimized for low RDS(on) and high current capability. The IRF8910PBF is ideal for low-frequency applications requiring performance and ruggedness.
IRF8910PBF Features
Very Low Ros(on) at 4.5V Vas
Ultra-L ow Gate Impedance
Fully Characterized Avalanche Voltage and Current
20V VGs Max. Gate Rating
IRF8910PBF Applications
DC motors
Battery management systems
Inverters
DC-DC converters
