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ContactIRF8910GPBF
MOSFET 2N-CH 20V 10A 8-SO
- Manufacturer: Infineon Technologies
- NO: 376-IRF8910GPBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 3084
- Description: MOSFET 2N-CH 20V 10A 8-SO(Kg)
- Delivery:
- Payment:
In Stock
Please send RFQ , we will respond immediately.
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Currently, our products are shipped through DHL, FedEx, SF, and UPS.
Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Supplier Device Package | 8-SO |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2009 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Base Part Number | IRF8910GPBF |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Power Dissipation | 2W |
| Turn On Delay Time | 6.2 ns |
| Power - Max | 2W |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 13.4mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.55V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 960pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Rise Time | 10ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 4.1 ns |
| Turn-Off Delay Time | 9.7 ns |
| Continuous Drain Current (ID) | 10A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 20V |
| Input Capacitance | 960pF |
| FET Feature | Logic Level Gate |
| Drain to Source Resistance | 18.3mOhm |
| Rds On Max | 13.4 mΩ |
| Height | 1.4986mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
