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IRF8313PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF8313PBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 3015
- Description: IRF8313PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Operating Mode | ENHANCEMENT MODE |
| Power - Max | 2W |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 15.5m Ω @ 9.7A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds | 760pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 9.7A |
| Gate Charge (Qg) (Max) @ Vgs | 90nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| JEDEC-95 Code | MS-012AA |
| Drain Current-Max (Abs) (ID) | 9.7A |
| Drain-source On Resistance-Max | 0.0155Ohm |
| Pulsed Drain Current-Max (IDM) | 81A |
| DS Breakdown Voltage-Min | 30V |
| Avalanche Energy Rating (Eas) | 46 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) | 2W |
| FET Feature | Logic Level Gate |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 6 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Published | 2004 |
| JESD-609 Code | e3 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | IRF8313PBF |
| JESD-30 Code | R-PDSO-G8 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
IRF8313PBF Description
IRF8313PbF uses the latest HEXFET power MOSFET silicon technology in industry-standard SO-8 packaging. IRF8313PbF optimizes key parameters in synchronous buck operation, including RDS (conduction) and gate charge, to reduce conduction and switching losses. The reduced total loss makes the product ideal for high-efficiency DC-DC converters that power the latest generation of processors in notebook and Netcom applications.
IRF8313PBF Applications
·Load Switch
DC/DC Conversion
IRF8313PBF Features
Low Gate Charge and Low RDS(on)
Fully Characterized Avalanche Voltage and Current
20VVGs Max. Gate Rating100% Tested for RG
Lead-Free(Qualified to 260℃Reflow)
RoHS Compliant(Halogen Free)
