IRF820PBF

IRF820PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi


  • Manufacturer: Vishay Siliconix
  • NO: 880-IRF820PBF
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 2104
  • Description: IRF820PBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Supplier Device Package TO-220AB
Weight 6.000006g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1997
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 3Ohm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Voltage - Rated DC 500V
Technology MOSFET (Metal Oxide)
Current Rating 2.5A
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 50W Tc
Element Configuration Single
Power Dissipation 50W
Turn On Delay Time 8 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
Current - Continuous Drain (Id) @ 25°C 2.5A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 8.6ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 33 ns
Continuous Drain Current (ID) 2.5A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 500V
Input Capacitance 360pF
Recovery Time 520 ns
Drain to Source Resistance 3Ohm
Rds On Max 3 Ω
Nominal Vgs 4 V
Height 9.01mm
Length 10.41mm
Width 4.7mm
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF820PBF Overview


Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 360pF @ 25V.This device conducts a continuous drain current (ID) of 2.5A, which is the maximum continuous current transistor can conduct.Using VGS=500V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 500V (that is, no charge flow from drain to source).Its turn-off delay time is 33 ns, which is the time to charge the device's input capacitance before drain current conduction begins.MOSFETs have 3Ohm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).A turn-on delay time of 8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor's threshold voltage is 4V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To operate this transistor, you will need a 500V drain to source voltage (Vdss).Using drive voltage (10V) reduces this device's overall power consumption.

IRF820PBF Features


a continuous drain current (ID) of 2.5A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 33 ns
single MOSFETs transistor is 3Ohm
a threshold voltage of 4V
a 500V drain to source voltage (Vdss)

IRF820PBF Applications


There are a lot of Vishay Siliconix IRF820PBF applications of single MOSFETs transistors.

  • Solar Inverter
  • PFC stages, hard switching PWM stages and resonant switching
  • LCD/LED TV
  • Telecom 1 Sever Power Supplies
  • Synchronous Rectification
  • Power Management Functions
  • Lighting
  • Motor Drives and Uninterruptible Power Supples
  • AC-DC Power Supply
  • DC-to-DC converters

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