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IRF7907PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF7907PBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 7094
- Description: IRF7907PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | IRF7907PBF |
| JESD-30 Code | R-PDSO-G8 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Power - Max | 2W |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 16.4m Ω @ 9.1A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 9.1A 11A |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Drain Current-Max (Abs) (ID) | 11A |
| Drain-source On Resistance-Max | 0.0118Ohm |
| Pulsed Drain Current-Max (IDM) | 85A |
| DS Breakdown Voltage-Min | 30V |
| Avalanche Energy Rating (Eas) | 15 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Power Dissipation-Max (Abs) | 2W |
| FET Feature | Logic Level Gate |
| RoHS Status | ROHS3 Compliant |
IRF7907PBF Description
The IRF7907PBF combines cutting-edge DirectFETTM packaging and contemporary HEXFET? Power MOSFET Silicon technology. When application note AN-1035 defining the manufacturing procedures and methods is followed, the DirectFET package is compatible with the layout geometries currently used in power applications, PCB assembly equipment, and vapor phase, infrared, or convection soldering techniques. In comparison to the previous-best, the DirectFET package's two-sided cooling increases heat transport in power systems while reducing thermal resistance by 80%.
IRF7907PBF Features
RDS(on) is Very Low at 4.5V VGS.
Small Gate Fee
Voltage and Current Characterized Avalanche in Full
Max. Gate Rating for 20V VGS
improved reverse recovery of the body diode
Completely tested for RG
Lead-Free
IRF7907PBF Applications
For POL, two SO-8 MOSFETs
Converters for servers, notebook computers, and
Game consoles, graphics cards, and set-top boxes
