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IRF7905PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF7905PBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 3551
- Description: IRF7905PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Supplier Device Package | 8-SO |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Resistance | 21.8MOhm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 2W |
| Current Rating | 7.8A |
| Base Part Number | IRF7905PBF |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Power Dissipation | 2W |
| Power - Max | 2W |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 21.8mOhm @ 7.8A, 10V |
| Vgs(th) (Max) @ Id | 2.25V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 7.8A 8.9A |
| Gate Charge (Qg) (Max) @ Vgs | 6.9nC @ 4.5V |
| Rise Time | 9.3ns |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time (Typ) | 3.4 ns |
| Turn-Off Delay Time | 8.1 ns |
| Continuous Drain Current (ID) | 8.9A |
| Threshold Voltage | 1.8V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Input Capacitance | 600pF |
| Recovery Time | 15 ns |
| FET Feature | Logic Level Gate |
| Drain to Source Resistance | 21.3mOhm |
| Rds On Max | 21.8 mΩ |
| Nominal Vgs | 1.8 V |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Lead Free |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
IRF7905PBF Description
Modern HEXFET? Power MOSFET Silicon technology and cutting-edge DirectFETTM packaging are combined in the IRF7905PBF. The DirectFET package is compatible with the layout geometries currently used in power applications, PCB assembly machinery, and vapor phase, infrared, or convection soldering techniques when application note AN-1035 outlining the manufacturing procedures and methods is followed. The DirectFET package's two-sided cooling improves heat transmission in power systems while reducing thermal resistance by 80% when compared to the prior-best.
IRF7905PBF Features
RDS(on) is Very Low at 4.5V VGS.
Small Gate Fee
Voltage and Current Characterized Avalanche in Full
Max. Gate Rating for 20V VGS
improved reverse recovery of the body diode
Completely tested for RG
Lead-Free
IRF7905PBF Applications
POL dual SO-8 MOSFET
Converters for servers, notebook computers, and
Game consoles, graphics cards, and set-top boxes
