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IRF7904TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF7904TRPBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 9135
- Description: IRF7904TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Continuous Drain Current (ID) | 11A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 16.2MOhm |
| Subcategory | FET General Purpose Power |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Base Part Number | IRF7904PBF |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Power - Max | 1.4W 2W |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 16.2m Ω @ 7.6A, 10V |
| Vgs(th) (Max) @ Id | 2.25V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds | 910pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 7.6A 11A |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
IRF7904TRPBF Description
International Rectifier's Fifth Generation HEXFETs use state-of-the-art manufacturing techniques to generate extremely low on-resistance per silicon area. The designe is provided with an extraordinarily efficient and reliable device for use in a variety of applications thanks to this feature as well as the high switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for. The SO-8 is ideal for a range of power applications thanks to its enhanced thermal characteristics and multiple-die capacity. The use of a leadframe that was especially created allowed for this alteration. This innovation significantly reduces the amount of board space required while enabling the use of several devices. The package is meant to be used in conjunction with vapor phase infrared technology or wave soldering.
IRF7904TRPBF Features
RDS(on) is Very Low at 4.5V VGS.
Small Gate Fee
Comprehensive Characterization of Avalanche Voltage and Current
Max. Gate Rating for 20V VGS
improved reverse recovery of the body diode
Completely tested to be RG Lead-Free
IRF7904TRPBF Applications
POL dual SO-8 MOSFET
Converters for servers, notebook computers, and
Game consoles, graphics cards, and set-top boxes
