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IRF7904PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF7904PBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 7564
- Description: IRF7904PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 2W |
| Current Rating | 7.6A |
| Base Part Number | IRF7904PBF |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Power Dissipation | 2W |
| Power - Max | 1.4W 2W |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 16.2m Ω @ 7.6A, 10V |
| Vgs(th) (Max) @ Id | 2.25V @ 25μA |
| Input Capacitance (Ciss) (Max) @ Vds | 910pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 7.6A 11A |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| Continuous Drain Current (ID) | 11A |
| Threshold Voltage | 2.25V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Recovery Time | 17 ns |
| FET Feature | Logic Level Gate |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | RoHS Compliant |
| Lead Free | Exempt |
IRF7904PBF Description
HEXFET is trademark of power MOSFET developed by International Rectifier. As shown silicon oxide layer between gate and source regions can be punctured by exceeding its dielectric strength.
IRF7904PBF Applications
Dual SO-8 MOSFET for POL
Converters in Notebook Computers, Servers,
Graphics Cards, Game Consoles
and Set-Top Box
IRF7904PBF Features
Very Low RDS(on) at 4.5V VGS
Low Gate Charge
Fully Characterized Avalanche Voltage
and Current
20V VGS Max. Gate Rating
Improved Body Diode Reverse Recovery
100% Tested for RG
Lead-Free
