IRF7757TRPBF

MOSFET 2N-CH 20V 4.8A 8TSSOP


  • Manufacturer: Infineon Technologies
  • NO: 376-IRF7757TRPBF
  • Package: 8-TSSOP (0.173, 4.40mm Width)
  • Datasheet: pdf
  • Stock: 5684
  • Description: MOSFET 2N-CH 20V 4.8A 8TSSOP(Kg)

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  • Delivery: Delivery
  • Payment: payment

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SPECIFICATIONS

Parameters
Published 2005
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Termination SMD/SMT
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Max Power Dissipation 1.2W
Number of Elements 2
Element Configuration Dual
Power Dissipation 1.2W
Turn On Delay Time 9.5 ns
Power - Max 1.2W
FET Type 2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs 35mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1340pF @ 15V
Current - Continuous Drain (Id) @ 25°C 4.8A
Gate Charge (Qg) (Max) @ Vgs 23nC @ 4.5V
Rise Time 9.2ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 4.8A
Threshold Voltage 1.2V
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Dual Supply Voltage 20V
Input Capacitance 1.34nF
FET Feature Logic Level Gate
Drain to Source Resistance 35mOhm
Rds On Max 35 mΩ
Nominal Vgs 1.2 V
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status RoHS Compliant
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP (0.173, 4.40mm Width)
Number of Pins 8
Supplier Device Package 8-TSSOP
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)

In Stock

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