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IRF7750 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF7750
- Package: 8-TSSOP (0.173, 4.40mm Width)
- Datasheet:
- Stock: 187
- Description: IRF7750 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP (0.173, 4.40mm Width) |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2007 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | MATTE TIN |
| Additional Feature | HIGH RELIABILITY |
| HTS Code | 8541.29.00.95 |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -20V |
| Max Power Dissipation | 1W |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Current Rating | -4.7A |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Base Part Number | IRF7750 |
| JESD-30 Code | R-PDSO-G8 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 30m Ω @ 4.7A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 5V |
| Drain to Source Voltage (Vdss) | 20V |
| Continuous Drain Current (ID) | 4.7A |
| JEDEC-95 Code | MO-153AA |
| Drain-source On Resistance-Max | 0.03Ohm |
| Drain to Source Breakdown Voltage | -20V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| RoHS Status | Non-RoHS Compliant |
| Lead Free | Contains Lead |
IRF7750 Description
International Rectifier's HEXFET* power MOSFET uses advanced technology to achieve extremely low on-resistance per silicon area, which is combined with the well-known rugged device design of International Rectifier. Provide designers with extremely efficient and reliable battery and load management equipment.
Compared with the standard SO-8, the footing area of the TSSOP-8 package is reduced by 45%, which makes the TSSOP-8 an ideal device for applications where space is scarce on the printed circuit board. Ultra-thin (< 1.1 mm) enables it to easily adapt to extremely thin environments, such as portable electronics and PCMCIA cards.
IRF7750 Features
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile ( < 1.1mm)
Available in Tape & Reel
IRF7750 Applications
portable electronics
PCMCIA cards
