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Delivery TimeOnce the goods are shipped, estimated delivery time depends on the shipping methods you chose:
FedEx International, 5-7 business days.
The following are some common countries' logistic time.
| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 2 (1 Year) |
| Number of Terminations | 8 |
| Resistance | 270mOhm |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Voltage - Rated DC | -20V |
| Max Power Dissipation | 1.25W |
| Terminal Form | GULL WING |
| Current Rating | -1.7A |
| Base Part Number | IRF7504PBF |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.25W |
| Turn On Delay Time | 9.1 ns |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 270m Ω @ 1.2A, 4.5V |
| Vgs(th) (Max) @ Id | 700mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 240pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 1.7A |
| Gate Charge (Qg) (Max) @ Vgs | 8.2nC @ 4.5V |
| Rise Time | 35ns |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time (Typ) | 43 ns |
| Turn-Off Delay Time | 38 ns |
| Continuous Drain Current (ID) | -1.7A |
| Threshold Voltage | -700mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | -20V |
| Pulsed Drain Current-Max (IDM) | 9.6A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Height | 860μm |
| Length | 3mm |
| Width | 3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance persilicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well knowm for. providesthe desanerwth anextremevelcent and reliable device for use in a wide variety of applications. The newMicro8 package, with half the footprint area ofthe standard S08. provides the smallest footprint avallable in an Solcoutline. This makes the Micro8 an idealdevice for applications where printed circuit board space is at a premium. The lowprofile (<1.1mm) ofthe Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards
Generation V Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Lead-Free
• Rail Transportation
• Defense / Aerospace
• Industrial
• Process Control
Please send RFQ , we will respond immediately.