IRF7504TRPBF

IRF7504TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • NO: 376-IRF7504TRPBF
  • Package: 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
  • Datasheet: pdf
  • Stock: 9501
  • Description: IRF7504TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 12 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 1997
Series HEXFET®
JESD-609 Code e3
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 2 (1 Year)
Number of Terminations 8
Resistance 270mOhm
Additional Feature LOGIC LEVEL COMPATIBLE
Voltage - Rated DC -20V
Max Power Dissipation 1.25W
Terminal Form GULL WING
Current Rating -1.7A
Base Part Number IRF7504PBF
Number of Elements 2
Element Configuration Dual
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.25W
Turn On Delay Time 9.1 ns
FET Type 2 P-Channel (Dual)
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 270m Ω @ 1.2A, 4.5V
Vgs(th) (Max) @ Id 700mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 240pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.7A
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 4.5V
Rise Time 35ns
Drain to Source Voltage (Vdss) 20V
Fall Time (Typ) 43 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) -1.7A
Threshold Voltage -700mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage -20V
Pulsed Drain Current-Max (IDM) 9.6A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 860μm
Length 3mm
Width 3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

IRF7504TRPBF              Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance persilicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well knowm for. providesthe desanerwth anextremevelcent and reliable device for use in a wide variety of applications. The newMicro8 package, with half the footprint area ofthe standard S08. provides the smallest footprint avallable in an Solcoutline. This makes the Micro8 an idealdevice for applications where printed circuit board space is at a premium. The lowprofile (<1.1mm) ofthe Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards


IRF7504TRPBF               Features   

Generation V Technology 

Ultra Low On-Resistance 

Dual P-Channel MOSFET 

Very Small SOIC Package 

Low Profile (<1.1mm)

Available in Tape & Reel 

Fast Switching 

Lead-Free 



IRF7504TRPBF                 Applications               

• Rail Transportation

• Defense / Aerospace

• Industrial

• Process Control


In Stock

Please send RFQ , we will respond immediately.