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IRF7503TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF7503TRPBF
- Package: 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Datasheet:
- Stock: 5080
- Description: IRF7503TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 135mOhm |
| Additional Feature | ULTRA LOW RESISTANCE |
| Voltage - Rated DC | 30V |
| Max Power Dissipation | 1.25W |
| Terminal Form | GULL WING |
| Current Rating | 2.4A |
| Base Part Number | IRF7503PBF |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.25W |
| Turn On Delay Time | 4.7 ns |
| FET Type | 2 N-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 135m Ω @ 1.7A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
| Rise Time | 10ns |
| Fall Time (Typ) | 5.3 ns |
| Turn-Off Delay Time | 12 ns |
| Continuous Drain Current (ID) | 2.4A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 14A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1 V |
| Height | 860μm |
| Length | 3mm |
| Width | 3mm |
IRF7503TRPBF Description
International Rectifier's Fifth Generation HEXFETs employ cutting-edge processing methods to produce extraordinarily low on-resistance per silicon area. This benefit gives the designer a highly effective and dependable device for usage in a range of applications, together with the quick switching speed and ruggedized device design that HEXFET Power MOSFETs are widely known for. The new Micro8 package offers the smallest footprint of any SOIC design, with a footprint area that is half that of the traditional SO-8. Since printed circuit board space is at a premium in these applications, the Micro8 is the perfect device. The Micro8 will readily fit into extremely small application contexts like portable electronics and PCMCIA cards thanks to its tiny profile (1.1mm).
IRF7503TRPBF Features
? Technology Generation No Logic
? Lowest On-Resistance Ever
? MOSFETs with two N-channels.
? Small SOIC Packages
? Small Profile (1.1mm)
? Available on reel-to-reel tape
? Quick Switching
? Lead-Free
IRF7503TRPBF Applications
Switching applications
