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IRF7389TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF7389TRPBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 6172
- Description: IRF7389TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Resistance | 29mOhm |
| Additional Feature | AVALANCHE RATED, ULTRA LOW RESISTANCE |
| Max Power Dissipation | 2.5W |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 7.3A |
| Base Part Number | IRF7389PBF |
| Number of Elements | 2 |
| Row Spacing | 6.3 mm |
| Number of Channels | 1 |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 29m Ω @ 5.8A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| Rise Time | 13ns |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| Fall Time (Typ) | 32 ns |
| Turn-Off Delay Time | 34 ns |
| Continuous Drain Current (ID) | 7.3A |
| Threshold Voltage | 1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 30A |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | 1 V |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead, Lead Free |
| Factory Lead Time | 12 Weeks |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
IRF7389TRPBF Description
In order to produce extraordinarily low on-resistance per silicon area, International Rectifier's Fifth Generation HEXFETs employ cutting-edge processing processes. With this benefit combined with the high switching speed and ruggedized device architecture that HEXFET Power MOSFETs are renowned for, the designe is given an incredibly efficient and dependable device for usage in a number of applications. Its improved thermal properties and multiple-die capacity make the SO-8 perfect for a variety of power applications. This modification was made possible by a specially designed leadframe. This advancement allows for the usage of many devices while drastically reducing the amount of board space needed. Vapor phase infrared, or wave soldering technology is intended for use with the packaging.
IRF7389TRPBF Features
Generating Technology V
Extremely Low On-Resistant
Offering a Free Half Bridge
The Surface Mount
Complete Avalanche Rating
Lead-Free
IRF7389TRPBF Applications
Switching applications
