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IRF7389 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF7389
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 664
- Description: IRF7389 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Drain-source On Resistance-Max | 0.029Ohm |
| Pulsed Drain Current-Max (IDM) | 30A |
| DS Breakdown Voltage-Min | 30V |
| Avalanche Energy Rating (Eas) | 82 mJ |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| RoHS Status | Non-RoHS Compliant |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Series | HEXFET® |
| JESD-609 Code | e0 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN LEAD |
| Additional Feature | HIGH RELIABILITY, AVALANCHE RATED |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 245 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| JESD-30 Code | R-PDSO-G8 |
| Qualification Status | Not Qualified |
| Number of Elements | 2 |
| Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Power - Max | 2.5W |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 29m Ω @ 5.8A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| JEDEC-95 Code | MS-012AA |
| Drain Current-Max (Abs) (ID) | 7.3A |
IRF7389 Description
The Infineon Technologies IRF7389 is a 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package.
IRF7389 Features
RoHS Compliant
Low RDS(on)
Dynamic dv/dt Rating
Fast Switching
Dual N- and P-Channel MOSFET
IRF7389 Applications
High-frequency DC-DC converters
