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| Parameters | |
|---|---|
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 1998 |
| Series | HEXFET® |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Additional Feature | AVALANCHE RATED, ULTRA LOW RESISTANCE |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | R-PDSO-G8 |
| Number of Elements | 2 |
| Configuration | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE |
| Operating Mode | ENHANCEMENT MODE |
| Power - Max | 2.5W |
| FET Type | N and P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 45m Ω @ 5.8A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 5.8A 4.3A |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
| JEDEC-95 Code | MS-012AA |
| Drain Current-Max (Abs) (ID) | 5.8A |
| Drain-source On Resistance-Max | 0.045Ohm |
| Pulsed Drain Current-Max (IDM) | 46A |
| DS Breakdown Voltage-Min | 30V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Standard |
| RoHS Status | Non-RoHS Compliant |
International Rectifier's fifth generation HEXFET uses advanced technology to achieve extremely low on-resistance per silicon area, which, combined with HEXFET Power MOSFET's well-known fast switching speed and rugged device design, provides designers with extremely efficient and reliable devices for a variety of applications.SO-8 is improved by customizing lead frames to enhance thermal characteristics and multi-chip capabilities, making it an ideal choice for a variety of power applications.With these improvements multiple devices for applications where circuit board space is greatly reduced. The package is specially designed for gas phase infrared or wave soldering technology.
Generation V Technology
Ultra Low On-Resistance
Complimentary Half Bridge
Surface Mount
Fully Avalanche Rated Lead-Free
making it an ideal choice for a variety of power applications.With these improvements multiple devices for applications
Please send RFQ , we will respond immediately.