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IRF7351PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF7351PBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 9880
- Description: IRF7351PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Supplier Device Package | 8-SO |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2006 |
| Series | HEXFET® |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Base Part Number | IRF7351PBF |
| Number of Elements | 2 |
| Element Configuration | Dual |
| Power Dissipation | 2W |
| Turn On Delay Time | 5.1 ns |
| Power - Max | 2W |
| FET Type | 2 N-Channel (Dual) |
| Rds On (Max) @ Id, Vgs | 17.8mOhm @ 8A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 50μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1330pF @ 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Rise Time | 5.9ns |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time (Typ) | 6.7 ns |
| Turn-Off Delay Time | 17 ns |
| Continuous Drain Current (ID) | 8A |
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Input Capacitance | 1.33nF |
| Recovery Time | 30 ns |
| FET Feature | Logic Level Gate |
| Drain to Source Resistance | 17.8mOhm |
| Rds On Max | 17.8 mΩ |
| Nominal Vgs | 4 V |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRF7351PBF Description
HEXFET is trademark of power MOSFET developed by International Rectifier. The HEXFET structure is shown in the figure-2. As shown silicon oxide layer between gate and source regions can be punctured by exceeding its dielectric strength. The symbol is same as power MOSFET as shown in the figure-1. It is a voltage controlled power MOSFET device.
IRF7351PBF Applications
Synchronous Rectifier MOSFET for
Isolated DO-DC Converters
·Low Power Motor Drive Systems
IRF7351PBF Features
Ultra-Low Gate Impedance
Fully Characterized Avalanche Voltage and Current
20V VGs Max. Gate Rating
