IRF7342QTRPBF

MOSFET 2P-CH 55V 3.4A 8SOIC


  • Manufacturer: Infineon Technologies
  • NO: 376-IRF7342QTRPBF
  • Package: 8-SOIC (0.154, 3.90mm Width)
  • Datasheet: pdf
  • Stock: 5361
  • Description: MOSFET 2P-CH 55V 3.4A 8SOIC(Kg)

Quantity:


  • Delivery: Delivery
  • Payment: payment

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Shipping Cost

Shipping starts at $40, but some countries will exceed $40. For example (South Africa, Brazil, India, Pakistan, Israel, etc.)
The basic freight (for package ≤0.5kg or corresponding volume) depends on the time zone and country.

Shipping Method

Currently, our products are shipped through DHL, FedEx, SF, and UPS.

Delivery Time

Once the goods are shipped, estimated delivery time depends on the shipping methods you chose:

FedEx International, 5-7 business days.

The following are some common countries' logistic time.transport

SPECIFICATIONS

Parameters
Factory Lead Time 30 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Number of Pins 8
Packaging Cut Tape (CT)
Published 2014
Series HEXFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Subcategory Other Transistors
Max Power Dissipation 2W
Base Part Number IRF7342QPBF
Number of Elements 2
Power Dissipation 2W
Turn On Delay Time 14 ns
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 105m Ω @ 3.4A, 10V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 690pF @ 25V
Current - Continuous Drain (Id) @ 25°C 3.4A
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Rise Time 10ns
Drain to Source Voltage (Vdss) 55V
Fall Time (Typ) 22 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) -3.4A
Gate to Source Voltage (Vgs) 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Height 1.4986mm
Length 4.9784mm
Width 3.9878mm
Radiation Hardening No
RoHS Status ROHS3 Compliant

In Stock

Please send RFQ , we will respond immediately.