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IRF7329PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRF7329PBF
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 692
- Description: IRF7329PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Series | HEXFET® |
| JESD-609 Code | e3 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 17MOhm |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | HIGH RELIABILITY |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -12V |
| Max Power Dissipation | 2W |
| Terminal Form | GULL WING |
| Current Rating | -9.2A |
| Base Part Number | IRF7329PBF |
| Number of Elements | 2 |
| Row Spacing | 6.3 mm |
| Element Configuration | Dual |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 10 ns |
| FET Type | 2 P-Channel (Dual) |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 17m Ω @ 9.2A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3450pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 9.2A |
| Gate Charge (Qg) (Max) @ Vgs | 57nC @ 4.5V |
| Rise Time | 8.6ns |
| Drain to Source Voltage (Vdss) | 12V |
| Fall Time (Typ) | 260 ns |
| Turn-Off Delay Time | 340 ns |
| Continuous Drain Current (ID) | -9.2A |
| Threshold Voltage | -900mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | -12V |
| Dual Supply Voltage | -12V |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| FET Feature | Logic Level Gate |
| Nominal Vgs | -900 mV |
| Height | 1.4986mm |
| Length | 4.9784mm |
| Width | 3.9878mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
IRF7329PBF Description
The Infineon Technologies IRF7329PBF is a -12V Dual P-Channel HEXFET Power MOSFET in a SO-8 package from International Rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance.
IRF7329PBF Features
Trench Technology
Ultra-Low On-Resistance
Dual P-Channel MOSFET
Low Profile (<1.8mm)
Available in Tape & Reel
Lead-Free
IRF7329PBF Applications
DC motor drive
High-efficiency synchronous rectification in SMPS
